Abstract

Using a ion model in an N-type semiconductor and a product Gaussian wave function with two variational parameters, closed analytical expressions are obtained for binding energy when the system is subjected to intense magnetic fields. The important results obtained are enhancement in ionization energy as the magnetic field (B) increased, reduction in (e - e) interaction energy as B increased, and enhancement in (e – e) – interaction energy with an increase in donor concentration. The quantitative estimates of the (e – e) – interaction in a magnetic field is a new result, which is discussed in the light of MIT and superconductivity